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Intel has come a long way when it comes to manufacturing silicon chips. Transistor density improvements, smaller transistor sizes, greater speed and lower power consumption are some of the things that we’ve seen Intel doing very well in the past few years. Today, Intel announced once again that they are on track to delivering the next generation of 90nm process technology. It’s also the first time Intel will incorporate strained silicon to further enhance the speed of the transistor. Otellini also told the audience that Intel is currently on track to deliver the first 65nm wafer in 2005. In order to do that, Intel will continue to invest up to US$10 billion in new fabs and equipments.
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