Hynix’s newly-validated DDR3 products are 1Gigabit DDR3 SDRAM component manufactured on the Company’s leading edge 80nm process technology, 1Gigabyte and 2Gigabyte DDR3 Unbuffered-DIMMs. These devices boast operating speeds of 800MHz and 1066MHz at 1.5V power supply -- the fastest in the industry. These speeds are offered in latency combinations of 5-5-5 and 6-6-6 for 800MHz, and 7-7-7 for 1066MHz, to suit the needs of a wide range of PCs, workstations and other applications.

In addition to its high speed characteristics, DDR3 features reduced current consumption of almost 25%, compared to the present generation DDR2. Hynix’s ‘three-dimensional transistor’ architecture minimizes current leakage to further reduce overall current consumption and ensure data integrity.

“The small form-factor package of the Hynix 1Gb DDR3 reduces manufacturing cost and enables high density memory modules,” explains Dr. Kih Joong Sik, VP of DRAM Development.

DDR3 is the next generation DRAM interface which is expected to succeed the current mainstream DDR2 products. Demand for DDR3 is expected to emerge towards the end of the year. According to market research firm iSuppli, DDR3 will account for 25% of total DRAM shipments by the end of 2008 and dominate the market by 2010.

Mass production of the 1Gb DDR3 on the 80nm line will begin in the third quarter of this year. Hynix plans to manufacture the product on the new 66nm process beginning in late 2007.