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OCZ Technology Group Unveils New High Performance DDR2 Memory Solutions |
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| Sat, May 16 2009 | 12:41AM | PermaLink |
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OCZ Technology Group, a worldwide leader in innovative, ultra-high performance and high reliability memory, today expanded their lineup of DDR2 to include new high-speed 4GB kits qualified to operate and excel at a low voltages. These new OCZ solutions are designed to be the ultimate upgrade for users who not only want to reap the benefits of performance memory, but want a future-proof choice for their system.
“Though enthusiasts are known for applying increased voltage to modules in order to obtain higher performance, our newest modules offer exceptional speeds at lower voltages improving overall performance and stability,” commented Eugene Chang, Vice President of Product Management at the OCZ Technology Group. “By engineering modules with both high speed and reduced voltage requirements we are able to offer enthusiasts and gamers memory with increased headroom and overall better stability and performance over the long term,
OCZ’s premier 1200MHz, 1150MHz, and 1066MHz low-voltage offerings are optimized to leverage the latest DDR2 platforms, operating at blazing speeds to deliver enhanced overclocking capabilities, particularly important to enthusiasts and gamers looking to get the most from their RAM. Featuring a low-voltage specification ideal for maintaining memory stability and ensuring compatibility with a wide range of current and imminent motherboards, the latest OCZ DDR2 kits are an excellent way to achieve breakneck frequencies without exceeding 1.8V.
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Archived from OCZTECHNOLOGY
http://www.ocztechnology.com/aboutocz/press/2009/339
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