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288Mb RDRAM |
| Tue, January 04 2000 | 7:11AM | PermaLink |
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Samsung has developed a 288 MB (Rambus) RDRAM using the 0.17 micron process. They say the have also completed a 576MB (Rambus) RIMM Module. The chips are packages in Micro Ball Grid Array format and the data processing speed is 800MB/s per pin.
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FULL STORY @
Archived from SAMSUNG
http://www.usa.samsungsemi.com/about/press/288mrdram00.htm
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